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CG MATERIAL

Silicon Carbide Tray, SiC Tray

Silicon Carbide Tray, SiC Tray

Silicon Carbide (SiC) Trays are high-performance mechanical components that are commonly used in various industries for their unique properties. SiC Trays are made of silicon carbide material, which is a high-strength ceramic material that offers excellent hardness, wear resistance, and thermal shock resistance.

SiC Trays have a number of benefits over traditional tray materials like quartz or alumina, including their ability to withstand high temperatures and aggressive chemicals, their low particle generation, and their resistance to thermal shock. They are also known for their high mechanical strength and durability.

SiC Trays are commonly used in applications where high-temperature processing is required, such as in the semiconductor industry for processing wafers. They are available in a variety of sizes and shapes to fit different types of equipment, and they can be customized to meet specific application requirements.

SiC Trays are known for their long lifespan, making them a cost-effective choice for high-temperature processing applications. They are also easy to clean and maintain, making them a popular choice for cleanroom environments.

Overall, SiC Trays are an excellent choice for high-temperature processing applications that require high-performance, long-lasting trays that can withstand extreme conditions and provide reliable operation while minimizing particle contamination.

 

Silicon Carbide Ceramics Properties

Compound Formula SiC
Molecular Weight 40.1
Appearance Black
Melting Point 2,730° C (4,946° F) (decomposes)
Density 3.0 to 3.2 g/cm3
Electrical Resistivity 1 to 4 10x Ω-m
Poisson's Ratio 0.15 to 0.21
Specific Heat 670 to 1180 J/kg-K

Silicon Carbide Ceramics Specification

CAS#: 409-21-2, Not Hazardous
Powder, F.W. 40.10, m.p. 2700 °C, Spec. Gravity 3.217 gm/cm3
Item No. Description Purity Lot Size
CB14-85 Silicon Carbide Powder
Particle Size:18, 30, 40 or 200 mesh
> 85 %
F.C. < 2.5%, Fe2O3 < 2%, Al2O3 < 1.2%
Customize
CB14-90 Silicon Carbide Powder
Particle Size:18, 30, 40 or 200 mesh
> 90 %
F.C. < 1.5%, Fe2O3 < 1.2%
Customize
CB14-98 Silicon Carbide Powder
Particle Size:18, 30, 40 or 200 mesh
> 98 %
F.C. < 0.6%, Fe2O3 < 0.7%
Customize

Silicon Carbide Ceramics Applications

Until the invention of boron carbide in 1929, silicon carbide was the hardest synthetic material known. It has a Mohs hardness rating of 9, approaching that of a diamond. In addition, SiC crystal has fracture characteristics that make them extremely useful in grinding wheels and in abrasive paper and cloth products.

Its high thermal conductivity, together with its high-temperature strength, low thermal expansion, and resistance to chemical reaction and thermal shock, makes silicon carbide valuable in the manufacture of high-temperature bricks and other refractories.

SiC ceramic is also classed as a semiconductor, having an electrical conductivity between that of metals and insulating materials. This property, in combination with its thermal properties, makes SiC a promising substitute for traditional semiconductors such as silicon in high-temperature applications.


Silicon Carbide Tray Specifications

  Recrystallized SiC Sintered SiC Reaction Bonded SiC
Purity of Silicon Carbide 99.5% 98% > 88%
Max. Working Temp. (`C) 1650 1550 1300
Bulk Density (g/cm3) 2.7 3.1 > 3
Appearance Porosity < 15% 2.5 0.1
Flexural strength (MPa) 110 400 380
Compressive strength (MPa) >300 2200 2100
Thermal expansion (10^-6/`C) 4.6 (1200℃) 4.0 (< 500℃) 4.4 (< 500℃)
Thermal conductivity (W/m.K) 35~36 110 65
Main characteristics High temp. High resistance.
High purity
Fracture Toughness Chemical Resistance

 

Silicon Carbide Tray Applications

-Silicon carbide can be applied in areas such as semiconductor and coating.
-Our silicon carbide trays are widely used in LED industry.

 

Packaging

We handle our products with care to ensure they remain in their original condition during storage and transportation and to preserve their quality.

 

 

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