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Silicon Carbide Coated Graphite Trays

Silicon Carbide Coated Graphite Trays

Silicon Carbide (SiC) Coated Graphite Trays are high-performance components that are commonly used in the semiconductor industry for processing wafers. SiC Coated Graphite Trays are made by coating graphite trays with a layer of silicon carbide material, which is a high-strength ceramic material that offers excellent hardness, wear resistance, and thermal shock resistance.

SiC Coated Graphite Trays have a number of benefits over traditional trays made of materials like quartz or alumina, including their ability to withstand high temperatures and aggressive chemicals. They are also known for their low particle generation, which makes them ideal for use in cleanroom environments.

SiC Coated Graphite Trays are commonly used in applications where high-temperature processing of wafers is required, such as chemical vapor deposition (CVD) and physical vapor deposition (PVD). They are available in a variety of sizes and can be customized to fit different types of equipment.

SiC Coated Graphite Trays are known for their high durability and long lifespan, making them a cost-effective choice for semiconductor processing applications. They are also easy to clean and maintain, making them a popular choice for cleanroom environments.

Overall, SiC Coated Graphite Trays are an excellent choice for semiconductor processing applications that require high-performance, long-lasting trays that can withstand extreme conditions and provide reliable operation while minimizing particle contamination.


Silicon Carbide Ceramics Properties

Compound Formula SiC
Molecular Weight 40.1
Appearance Black
Melting Point 2,730° C (4,946° F) (decomposes)
Density 3.0 to 3.2 g/cm3
Electrical Resistivity 1 to 4 10x Ω-m
Poisson's Ratio 0.15 to 0.21
Specific Heat 670 to 1180 J/kg-K

Silicon Carbide Ceramics Specification

CAS#: 409-21-2, Not Hazardous
Powder, F.W. 40.10, m.p. 2700 °C, Spec. Gravity 3.217 gm/cm3
Item No. Description Purity Lot Size
CB14-85 Silicon Carbide Powder
Particle Size:18, 30, 40 or 200 mesh
> 85 %
F.C. < 2.5%, Fe2O3 < 2%, Al2O3 < 1.2%
CB14-90 Silicon Carbide Powder
Particle Size:18, 30, 40 or 200 mesh
> 90 %
F.C. < 1.5%, Fe2O3 < 1.2%
CB14-98 Silicon Carbide Powder
Particle Size:18, 30, 40 or 200 mesh
> 98 %
F.C. < 0.6%, Fe2O3 < 0.7%

Silicon Carbide Ceramics Applications

Until the invention of boron carbide in 1929, silicon carbide was the hardest synthetic material known. It has a Mohs hardness rating of 9, approaching that of a diamond. In addition, SiC crystal has fracture characteristics that make them extremely useful in grinding wheels and in abrasive paper and cloth products.

Its high thermal conductivity, together with its high-temperature strength, low thermal expansion, and resistance to chemical reaction and thermal shock, makes silicon carbide valuable in the manufacture of high-temperature bricks and other refractories.

SiC ceramic is also classed as a semiconductor, having an electrical conductivity between that of metals and insulating materials. This property, in combination with its thermal properties, makes SiC a promising substitute for traditional semiconductors such as silicon in high-temperature applications.

Silicon Carbide Coated Graphite Trays Applications

-CVD silicon carbide coating has been applied in semiconductor industries already, such as MOCVD tray, RTP and oxide etching chamber since silicon nitride has great thermal shock resistance and can withstand high energy plasma.
-Silicon carbide is widely used in semiconductor and coating.


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