CG MATERIAL
Sapphire Wafer
Sapphire Wafer
Sapphire wafers are precision substrates made from single-crystal aluminum oxide (Al₂O₃). They are widely used as base materials for epitaxial growth (GaN, AlN, LED structures), optical components, and advanced electronic devices due to their excellent thermal stability, electrical insulation, and mechanical strength.
CG Material supplies high-quality sapphire wafers in various diameters, orientations, thicknesses, and surface finishes.
Key Features
- High purity single crystal Al₂O₃ (≥99.99%)
- Excellent thermal stability up to ~1800°C
- High mechanical strength and hardness (Mohs 9)
- Superior chemical and plasma resistance
- Excellent electrical insulation properties
- Low defect density for epitaxial growth
- Available in epi-ready polished surfaces
Sapphire Wafer Specifications
|
Growth |
Kyroplous |
|
Diameter |
Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 5" |
|
Size |
10 x 10 / 20 x 20 / 50 x 50 / 100 x 100 mm |
|
Thickness |
0.43 mm / 0.5 mm / 1 mm |
|
Surface |
one side / two sides epi polished |
|
Roughness |
Ra ≤ 5 A |
|
Package |
Single wafer container or Ampak cassette |
|
Chemical formula |
Al2O3 |
|
Crystal structure |
Hexagonal |
|
Lattice constant |
4.77 A |
|
Hardness |
9 |
|
Thermal conductivity |
46 W / mk |
|
Dielectric constant |
11.58 |
|
Refractive index |
1.768 |
Custom Manufacturing
CG Material provides:
- Custom diameters and thickness
- Custom crystal orientation
- Epi-ready polishing (Ra < 0.2 nm)
- TTV / bow / warp control
- Cleanroom packaging
- Small sample or bulk production
Drawings and technical specifications are welcome.
Sapphire Wafer vs Silicon Wafer
| Property | Sapphire Wafer | Silicon Wafer |
|---|---|---|
| Hardness | Mohs 9 | Mohs 7 |
| Electrical Conductivity | Insulator | Semiconductor |
| Thermal Stability | Up to 1800°C | ~600°C |
| Chemical Resistance | Excellent | Moderate |
| Epitaxial Use | GaN / AlN | CMOS standard |
| Cost | Higher | Lower |
Sapphire Wafer Applications
Semiconductor Industry
Used as substrates for GaN, AlN, and LED epitaxial growth, high-frequency devices, and power electronics.
Optoelectronics
Used in laser diodes, photodetectors, and advanced optical thin-film systems.
Silicon on Sapphire (SOS)
High-performance insulating substrates for RF and high-speed electronic devices.
Research & Advanced Materials
Used in quantum research, thin film deposition, and material science experiments.
Request a Quote
Send us:
- Diameter
- Thickness
- Crystal orientation
- Surface finish
- Quantity
Our engineering team will provide a quotation within 24 hours.
