CG MATERIAL
Sapphire Wafer
Sapphire Wafer
Sapphire wafers are thin discs made from a single crystal of sapphire, a high-performance material with excellent mechanical, thermal, and optical properties. Sapphire wafers are commonly used in a wide range of applications, such as in the production of LEDs, high-temperature and high-pressure sensors, microelectronics, and other optical components.
The manufacturing process of sapphire wafers involves a complex and precise process of growing, cutting, and polishing the sapphire crystal. First, a seed crystal is placed in a crucible with molten alumina, and the crystal is slowly pulled upwards while rotating. This process allows a single crystal to form and grow vertically, with a specific orientation and lattice structure.
After the crystal is grown, it is then cut into thin discs using a diamond saw or laser cutting. These discs are then polished to a high degree of smoothness using a series of abrasives and chemical treatments, resulting in a flawless surface finish. The final wafers are then inspected and tested for quality and performance.
Sapphire wafers have a range of advantages over other materials, including high hardness, excellent optical clarity, high thermal conductivity, and high resistance to chemicals and corrosion. These properties make sapphire wafers ideal for a wide range of demanding applications, where precision, durability, and reliability are crucial.
Catalog No. | CERAMICS |
---|---|
Size | Customized |
Material | Al2O3 |
Purity | 95% 99% 99.7% |
Density | 3.8~3.9 g/cm3 |
At CG Material, we offer high quality Sapphire Wafer with exceptional purity and precision in terms of size. Our products range in diameter from 1mm to 100mm and have a purity level of up to 99.8%. We also provide custom manufacturing options for special shapes to meet specific needs.
Sapphire Wafer Specifications
Growth |
Kyroplous |
Diameter |
Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 5" |
Size |
10 x 10 / 20 x 20 / 50 x 50 / 100 x 100 mm |
Thickness |
0.43 mm / 0.5 mm / 1 mm |
Surface |
one side / two sides epi polished |
Roughness |
Ra ≤ 5 A |
Package |
Single wafer container or Ampak cassette |
Chemical formula |
Al2O3 |
Crystal structure |
Hexagonal |
Lattice constant |
4.77 A |
Hardness |
9 |
Thermal conductivity |
46 W / mk |
Dielectric constant |
11.58 |
Refractive index |
1.768 |
Sapphire Wafer Applications
– High-frequency device
– High power device
– GaN epitaxy device
– High-temperature device
– Optoelectronic device
– Light-emitting diode
Packaging
We handle our products with care to ensure they remain in their original condition during storage and transportation and to preserve their quality.