CG MATERIAL

Pyrolytic Boron Nitride Crucible, PBN Crucible, VGF Type

Pyrolytic Boron Nitride Crucible, PBN Crucible, VGF Type

High-Purity PBN Crucibles for Vertical Gradient Freeze Crystal Growth

PBN VGF Crucibles are manufactured from ultra-high-purity Pyrolytic Boron Nitride (PBN) using a CVD process. Designed for Vertical Gradient Freeze (VGF) crystal growth, they provide excellent thermal stability, low contamination, and superior resistance to molten semiconductor materials.

PBN VGF crucibles are widely used for the growth of GaAs, InP, GaP, and other compound semiconductor crystals requiring high purity and precise crystal quality.

Key Features

  • Purity ≥ 99.99%

  • Excellent thermal stability

  • Extremely low contamination

  • Non-wetting surface

  • High temperature resistance

  • Long service life

  • Ideal for compound semiconductor crystal growth

Typical Properties

Property Value
Material Pyrolytic Boron Nitride (PBN)
Purity ≥99.99%
Density 2.1 g/cm³
Max Temperature (Vacuum) 1800°C
Max Temperature (N₂) 2100°C
Structure Dense, Non-Porous

Applications

  • Crystal Growth

  • Compound Semiconductor Manufacturing

  • Semiconductor Research

Available Designs

  • Cylindrical VGF Crucibles

  • Tapered VGF Crucibles

  • Large-Diameter Crystal Growth Crucibles

  • Custom Designs per Drawing

Customization

  • Custom diameters and heights

  • Custom wall thickness

  • Large-size crucibles available

  • OEM manufacturing support

Request a Quote

Contact us today with your drawing or specifications for a fast quotation. Custom PBN VGF crucibles are available for semiconductor crystal growth and research applications.

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