CG MATERIAL
Pyrolytic Boron Nitride Crucible, PBN Crucible, VGF Type
Pyrolytic Boron Nitride Crucible, PBN Crucible, VGF Type
High-Purity PBN Crucibles for Vertical Gradient Freeze Crystal Growth
PBN VGF Crucibles are manufactured from ultra-high-purity Pyrolytic Boron Nitride (PBN) using a CVD process. Designed for Vertical Gradient Freeze (VGF) crystal growth, they provide excellent thermal stability, low contamination, and superior resistance to molten semiconductor materials.
PBN VGF crucibles are widely used for the growth of GaAs, InP, GaP, and other compound semiconductor crystals requiring high purity and precise crystal quality.
Key Features
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Purity ≥ 99.99%
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Excellent thermal stability
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Extremely low contamination
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Non-wetting surface
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High temperature resistance
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Long service life
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Ideal for compound semiconductor crystal growth
Typical Properties
| Property | Value |
|---|---|
| Material | Pyrolytic Boron Nitride (PBN) |
| Purity | ≥99.99% |
| Density | 2.1 g/cm³ |
| Max Temperature (Vacuum) | 1800°C |
| Max Temperature (N₂) | 2100°C |
| Structure | Dense, Non-Porous |
Applications
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Crystal Growth
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Compound Semiconductor Manufacturing
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Semiconductor Research
Available Designs
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Cylindrical VGF Crucibles
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Tapered VGF Crucibles
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Large-Diameter Crystal Growth Crucibles
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Custom Designs per Drawing
Customization
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Custom diameters and heights
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Custom wall thickness
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Large-size crucibles available
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OEM manufacturing support
Request a Quote
Contact us today with your drawing or specifications for a fast quotation. Custom PBN VGF crucibles are available for semiconductor crystal growth and research applications.