CG MATERIAL
Pyrolytic Boron Nitride Crucible, PBN Crucible, LEC Type
Pyrolytic Boron Nitride Crucible, PBN Crucible, LEC Type
High-Purity Pyrolytic Boron Nitride Crucibles for LEC Crystal Growth
PBN LEC Crucibles are ultra-high-purity Pyrolytic Boron Nitride (PBN) crucibles designed specifically for Liquid Encapsulated Czochralski (LEC) crystal growth processes. Manufactured via Chemical Vapor Deposition (CVD), they offer extremely low contamination, excellent thermal stability, and superior resistance to aggressive molten semiconductor materials.
These crucibles are widely used in the production of compound semiconductor crystals such as GaAs and InP under high-temperature and high-pressure conditions.
Key Features
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Purity ≥ 99.99%
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Excellent thermal shock resistance
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Extremely low outgassing
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High chemical inertness
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Stable performance under high pressure (LEC process)
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Non-wetting surface for molten materials
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Long service life compared with graphite crucibles
Typical Properties
| Property | Value |
|---|---|
| Material | Pyrolytic Boron Nitride (PBN) |
| Purity | ≥99.99% |
| Density | 2.1 g/cm³ |
| Max Temperature | Up to 1800°C (vacuum), 2100°C (inert gas) |
| Structure | Dense, Non-porous |
| Manufacturing | CVD Process |
Applications
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LEC (Liquid Encapsulated Czochralski) Crystal Growth
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GaAs Single Crystal Growth
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InP Crystal Growth
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Compound Semiconductor Production
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High-Purity Semiconductor Research
Available Designs
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Standard LEC Crucibles
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Large Diameter Crystal Growth Crucibles
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Cylindrical Types
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Custom Geometry per Drawing
Custom Options
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Custom diameter and height
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Wall thickness optimization
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Large-size crucibles available
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OEM / ODM production
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Small batch prototyping supported
Request a Quote
Contact us with your drawing or specifications for fast quotation. Custom PBN LEC crucibles are available for semiconductor crystal growth applications with global delivery support.
