CG MATERIAL
Boron Nitride Single Crystal
Boron Nitride Single Crystal
Boron Nitride Single Crystal is a high-purity and high-performance ceramic material that is made up of a single crystal of boron nitride. It is a white, transparent material with a hexagonal crystal structure that gives it exceptional mechanical, thermal, and electrical properties.
Boron Nitride Single Crystal is produced using a high-pressure, high-temperature (HPHT) synthesis process. This process involves subjecting boron nitride powder to extreme pressure and high temperature conditions, resulting in the growth of a single crystal of boron nitride.
Boron Nitride Single Crystal is highly valued for its unique combination of properties, which include high thermal conductivity, excellent electrical insulation, high strength, and resistance to chemical and thermal shock. These properties make it ideal for use in a variety of high-performance applications, such as cutting tools, heat sinks, and semiconductors.
Boron Nitride Single Crystal is also highly transparent in the infrared region, making it an ideal material for use in optical applications such as windows and lenses.
Boron Nitride Single Crystal is available in various sizes and shapes, including wafers, rods, and custom shapes, and can be tailored to meet specific application requirements. It is a relatively expensive material due to its high-purity and high-performance characteristics.
Overall, Boron Nitride Single Crystal is a high-performance ceramic material that offers exceptional properties and is highly valued in a variety of industrial and scientific applications.
Boron Nitride Ceramics Specification
CG Material production formulations are developed to address the varied application problems in which ceramic components are commonly used. Many industrial applications push the envelope on specific requirements leading to the development of new formulations to successfully address them.
Item No. | Description | Purity | Lot Size |
CG-NI05-98 | Boron Nitride Powder Particle Size: 3 µm, 200 mesh or 325mesh |
BN > 98 %, B2O3 < 0.6%, Ca < 0.015%, Si < 0.12% |
100 kg 1000kg Customize |
CG-NI05-99 | Boron Nitride Powder Particle Size: 3 µm, 200 mesh or 325mesh |
BN > 99 %, B2O3 < 0.4%, Ca < 0.01%, Si < 0.10% |
100 kg 1000kg Customize |
Comparison of Boron Nitride Ceramics
Grade | BN-BO | BN-SZ | BN-AlN |
Compositions | BN>98% | BN+SiC+ZrO2 | BN+AIN |
Binder | B2O3 | / | AlBO3 |
Density | 2.1-2.2 g/cm3 | 2.3-3.0 g/cm3 | 2.5-2.6 g/cm3 |
25°C Volume Resistivity | >1013 Ω·cm | >1012 Ω·cm | >1014 Ω·cm |
Max. Service Temp. (°C) Oxygen; Inert Gas; High Vacuum |
900 2000 1800 |
900 1700 1700 |
900 2100 1900 |
Flexural Strength | 75 Mpa | 100 Mpa | 130 Mpa |
Compressive Strength | 100 Mpa | 300 Mpa | 250 Mpa |
Coefficient of Thermal Expansion 25-1000°C |
2.0 x 10–6/K | 4.0 x 10–6/K | 4.5 x 10–6/K |
Thermal Conductivity | 30 W/mK | 40 W/mK | 60 W/mK |
Boron Nitride Single Crystal Specifications
Boron Nitride (BN) single crystal |
|
Crystal Structure |
Hexagonal |
Purity |
> 99.5% |
Resistivity |
Insulator |
Density |
1.9 to 2.1 g/cm3 |
Poisson's Ratio |
0.11 |
Orientation |
<100>,<110>,<111> |
Specific Heat |
840 to 1610 J/kg-K |
Packing |
~10 pcs/Box |
Boron Nitride Single Crystal Applications
Boron Nitride (BN) Single Crystals can be used as substrates for graphene in semiconductor applications such as optics and electronics.
Packaging
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