Aluminum Nitride (AlN) Description
Aluminum nitride (AlN) melts at 2800 °C. It has high thermal conductivity, excellent electrical insulation, low dielectric constant and dielectric loss. The thermal conductivity of aluminum nitride is 5 to 10 times that of the traditional substrate material aluminum oxide, which is close to the thermal conductivity of beryllium oxide.
The series of excellent characteristics are considered to be the ideal materials for highly concentrated semiconductor substrates and electronic device packaging. It can be used in a wide range of applications, such as optics, lighting, electronics and renewable energy.
Aluminum Nitride Properties
* High thermal conductivity
* Good dielectric properties
* Good corrosion resistance
* Stability in semiconductor processing atmospheres
* Low thermal expansion 4 to 6×10-6K-1(between 20 and 1000°C)
Aluminum Nitride Applications
*Chamber parts for semiconductor process equipment
* IC packages
Aluminum Nitride Products